Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip

文件：1.65092 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件：247.41 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.02455 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power Mosfet

文件：412.4 Kbytes 页数：5 Pages

ARTSCHIP

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

Vishay

威世

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：895.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18Ω ID = 18 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 20

文件：226.35 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )

文件：930.01 Kbytes 页数：8 Pages

IRF

HEXFET-R POWER MOSFET

文件：271.5 Kbytes 页数：8 Pages

IRF