Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18Ω ID = 18 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 20

文件：226.35 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：280.92 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，逻辑电平，A-FET，200 V，18 A，180 mΩ，TO-220

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a • 18 A, 200 VrDS(ON) = 180 mΩ @ VGS = 5 V\n• Low Gate Charge (Typ. 40 nC)\n• Low Crss (Typ. 95 pF)\n• Fast Switching Speed\n• 100% AvalancheTested\n• Improved dv/dt Capability\n•逻辑电平栅极驱动;

ONSEMI

安森美半导体

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )

文件：930.01 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.02455 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET-R POWER MOSFET

文件：271.5 Kbytes 页数：8 Pages

IRF