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IRLL014NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRLL014NPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
65230 |
询价 | ||||
INFINEON/英飞凌 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
Infineon Technologies |
22+ |
TO2614 TO261AA |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
12+ |
SOT-223 |
130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
22+ |
SOT-223 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
IR |
22+ |
NA |
30000 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
SOT-223 |
25500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
IR |
2020+ |
SOT223 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
23+ |
SOT223 |
7750 |
全新原装优势 |
询价 | ||
IR |
08+ |
SOT-223 |
20000 |
普通 |
询价 |