丝印：FDA24N40F；Package：TO-3PN；N-Channel UniFETTM FRFET® MOSFET 400 V, 23 A, 190 mΩ

Features • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s h

文件：1.50867 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FDA24N40F；Package：TO-3PN；N-Channel UniFETTM FRFET® MOSFET 400 V, 23 A, 190 mΩ

Features • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s h

文件：1.50867 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel MOSFET, FRFET 400V, 23A, 0.19廓

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recover

文件：682.38 Kbytes 页数：8 Pages

Fairchild

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

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isc N-Channel MOSFET Transistor

文件：302.31 Kbytes 页数：2 Pages

ISC

无锡固电