丝印：AO4410；Package：SOP-8；N-Channel MOSFET

Features ● VDS(V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.68087 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4410；Package：SOP-8；N-Channel MOSFET

Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON)

文件：1.73635 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：AO4410；Package：SOP-8；N-Channel MOSFET

Features ● VDS(V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.68087 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4410；Package：SOP-8；N-Channel MOSFET

Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON)

文件：1.73635 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410

文件：110.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Product Summary

文件：2.094139 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.26599 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.37175 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.44818 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410

文件：110.46 Kbytes 页数：4 Pages

AOSMD

万国半导体