型号：X9317UM8Z-2.7；Package：8LdMSOP；Low Noise, Low Power, 100 Taps, Digitally Controlled Potentiometer (XDCP??

文件：625.63 Kbytes 页数：13 Pages

RENESAS

瑞萨

型号：AOB11S60；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to

文件：297.89 Kbytes 页数：2 Pages

ISC

无锡固电

型号：AOB11S60；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03889 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

型号：AOB11S60L；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03889 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

型号：AOB11S65；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：297.62 Kbytes 页数：2 Pages

ISC

无锡固电

型号：AOB11S65；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.0389 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

型号：AOB11S65L；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.0389 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

型号：AOB15S60；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：298.02 Kbytes 页数：2 Pages

ISC

无锡固电

型号：AOB15S60L；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：298.03 Kbytes 页数：2 Pages

ISC

无锡固电

型号：AOB15S65；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：297.82 Kbytes 页数：2 Pages

ISC

无锡固电