600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：348.86 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：298.03 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：304.52 Kbytes 页数：2 Pages

ISC

无锡固电

600V 15A a MOS power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：348.86 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：348.86 Kbytes 页数：6 Pages

AOSMD

万国半导体