丝印：AO4480；Package：SOP-8；N-Channel MOSFET

Product Summary VDS (V) = 40V ID = 14A RDS(ON)

文件：621.24 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4480；Package：SOP-8；N-Channel MOSFET

Product Summary VDS (V) = 40V ID = 14A RDS(ON)

文件：621.24 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：4480；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES > Veo = 40V Io =15A | Roson

文件：1.95374 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4480；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 14 A (VGS = 10V) ● RDS(ON)

文件：1.51666 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4480；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 14 A (VGS = 10V) ● RDS(ON)

文件：1.82487 Mbytes 页数：4 Pages

KEXIN

科信电子

40V N-Channel MOSFET

General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Product Summary VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON)

文件：1.69966 Mbytes 页数：4 Pages

WHXPCB

万和兴电子

N-Channel 40-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Synchronous Rectification • POL, IBC - Secondary Side

文件：1.89199 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Product Summary VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON)

文件：141.23 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=12A,RDS(ON)

文件：673.13 Kbytes 页数：5 Pages

DOINGTER

杜因特

40V N-Channel MOSFET

General Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Product Summary VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON)

文件：473 Kbytes 页数：4 Pages

EVVOSEMI

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