N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.44818 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410

文件：110.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

Simple Drive Requirement, Low On-resistance

文件：63.47 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Ultra Low Power Dual Voltage Detector

文件：576.38 Kbytes 页数：11 Pages

AKM

旭化成微电子