AO4410-HF

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=18A(VGS=10V) ●RDS(ON)

AO4410L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4410usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion.StandardproductAO4410

AP4410AGM

SimpleDriveRequirement,LowOn-resistance

AP4410BEC

UltraLowPowerDualVoltageDetector

AP4410GM

LowOn-Resistance,FastSwitching

AP4410GM-HF

SimpleDriveRequirement

AP4410M

N-CHANNELENHANCEMENTMODE

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedfor

APM4410

N-ChannelEnhancementModeMOSFET

Features •30V/11.5A,RDS(ON)=9mΩ(typ.)@VGS=10V RDS(ON)=14.5mΩ(typ.)@VGS=4.5V •HighDensityCellDesign •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM4410K

N-ChannelEnhancementModeMOSFET

Features •30V/11.5A,RDS(ON)=9mΩ(typ.)@VGS=10V RDS(ON)=14.5mΩ(typ.)@VGS=4.5V •HighDensityCellDesign •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM4410KC-TR

N-ChannelEnhancementModeMOSFET

Features •30V/11.5A,RDS(ON)=9mΩ(typ.)@VGS=10V RDS(ON)=14.5mΩ(typ.)@VGS=4.5V •HighDensityCellDesign •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems