丝印：AOD442；Package：TO-252；60V N-Channel MOSFET

General Features VDS 60V ID (at VGS=10V) 37A RDS(ON) (at VGS=10V)

文件：454.72 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AOD442；Package：TO-252；60V N-Channel MOSFET

General Features VDS 60V ID (at VGS=10V) 37A RDS(ON) (at VGS=10V)

文件：454.72 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 37A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 20mΩ (Max) • 100 avalanche tested • Minimum L

文件：293.46 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 18mΩ (Max) • 100 avalanche tested • Minimum L

文件：293.82 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

General Description The AOD442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. General Features VDS 60V ID (at VGS=10V) 37A RDS(ON) (at VGS=10V)

文件：573.86 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=50A,RDS(ON)

文件：1.01357 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 6 0-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：896.87 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

60V N-Channel MOSFET

General Description The AOD442 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD442L (Green Product) is offered in a lead-free package. Features VDS (V) = 60V ID = 38A

文件：252.6 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：338.63 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

文件：338.63 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商