丝印：AO4441；Package：SOP-8；-60V P-Channel MOSFET

Features VDS (V) =-60V ID = -4A (VGS =-10V) RDS(ON)

文件：460.45 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4441；Package：SOP-8；-60V P-Channel MOSFET

General Description The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features ID = -4A (VGS =-10V) VDS (V) =-60V RDS(ON)

文件：569.37 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：AO4441；Package：SOP-8；-60V P-Channel MOSFET

Features VDS (V) =-60V ID = -4A (VGS =-10V) RDS(ON)

文件：460.45 Kbytes 页数：7 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4441；Package：SOP-8；-60V P-Channel MOSFET

General Description The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features ID = -4A (VGS =-10V) VDS (V) =-60V RDS(ON)

文件：569.37 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：4441；Package：SOP-8；P-Channel Enhancement Mode MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：3.19283 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4441 is Pb-free (meets ROHS & Sony 259 specifications). AO4441L is a Green Pr

文件：156.07 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-4 A (VGS =-10V) ● RDS(ON)

文件：1.27867 Mbytes 页数：4 Pages

KEXIN

科信电子

60V P-Channel MOSFET

General Description The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -60V ID (at VGS=-10V)

文件：2.17495 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.06019 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET uses advanced trench technology

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-3.2A,RDS(ON)

文件：659.12 Kbytes 页数：4 Pages

DOINGTER

杜因特