2SK3135STL-E资料使用说明书供应价格瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3135STL-E	文件：94.49 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 文件：94.49 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3135	文件：53.95 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 文件：53.95 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3135	文件：94.49 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 文件：94.49 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3135L	文件：53.95 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 文件：53.95 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SK3135STL-E供应商更新时间2025-12-24 8:31:00