Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.35 Kbytes 页数：8 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：51.83 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.35 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：334.89 Kbytes 页数：2 Pages

ISC

无锡固电