SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-

文件：39.41 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i

文件：372.04 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in Gate Protection Diode

文件：46.37 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60 V (D-S) MOSFET

文件：1.64113 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：399.05 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-

文件：39.41 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i

文件：372.04 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：331.51 Kbytes 页数：2 Pages

ISC

无锡固电