Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator Applications DC?묭C Converter

Switching Regulator Applications DC−DC Converter, and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 150 V) Enhancement−mode

文件：133.07 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：398.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

文件：1.00907 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications

文件：196.32 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Polarity：N-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 5 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS 150 V ;

Toshiba

东芝

Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications

文件：196.32 Kbytes 页数：3 Pages

TOSHIBA

东芝