2SK3234

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low drain blocking current: IDSS = 1 μA max (at VDS = 500 V) • Fast switching speed: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low input dynamic capacity (Qg): Qg = 25 nC typ (VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche W

文件：133.35 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche ratings

文件：210.09 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

文件：323.36 Kbytes 页数：2 Pages

ISC

无锡固电

2SK3234

HITACHI

日立

Power MOSFETs

Renesas

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche ratings

文件：210.09 Kbytes 页数：9 Pages

RENESAS

瑞萨