2SK3234-E

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance:RDS(on)=0.65Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=500V) •Highspeedswitching:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) •Lowgatecharge:Qg=25nCtyp(atVDD=400V,VGS=10V,ID=8A) •Avalancheratings

2SK3234

2SK3234

Features •Lowon-resistance:RDS(on)=0.65Ωtyp. •Lowdrainblockingcurrent:IDSS=1μAmax(atVDS=500V) •Fastswitchingspeed:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) •Lowinputdynamiccapacity(Qg):Qg=25nCtyp(VDD=400V,VGS=10V,ID=8A) •AvalancheW

2SK3234

iscN-ChannelMOSFETTransistor

2SK3234

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance:RDS(on)=0.65Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=500V) •Highspeedswitching:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) •Lowgatecharge:Qg=25nCtyp(atVDD=400V,VGS=10V,ID=8A) •Avalancheratings