Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

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HitachiHitachi Semiconductor

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isc N-Channel MOSFET Transistor

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ISC

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Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：156.73 Kbytes 页数：9 Pages

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Power MOSFETs

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