2SK3210STL资料datasheet下载原装现货瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3210STL	文件：156.73 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：156.73 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3210	文件：156.73 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：156.73 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3210	文件：35.22 Kbytes Page：5 Pages	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source 文件：35.22 Kbytes 页数：5 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3210(L)_15	文件：170.96 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching 文件：170.96 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多2SK3210STL供应商更新时间2026-1-30 18:33:00