Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (CMPAK)

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Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 1.26Ω typ. (at VGS =10V , ID =150mA) RDS = 2.8Ω typ. (at VGS =4V , ID =50mA) • 4V gate drive device • Small package (CMPAK)

文件：44.41 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Switching

• Low on-resistance\n   RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)\n   RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)\n• 4 V gate drive device.\n• Small package (CMPAK);

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