N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

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NEC

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw

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Nch Single Power Mosfet 20V 0.5A 570Mohm Ssp/Sc-70

The 2SK3663 is a Nch Single Power Mosfet 20V 0.5A 570Mohm Ssp/Sc-70. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3663 Data Sheet;

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N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and

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VBSEMI

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：196.12 Kbytes 页数：8 Pages

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