MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：324.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

文件：48.41 Kbytes 页数：4 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features Super low on-state resistance: RDS(on)1=4.0mΩ MAX. (VGS=10V,ID=42A) RDS(on)2=6.9mΩ MAX. (VGS=4V,ID=42A) Low Ciss:Ciss = 9500 pF TYP. Built-in gate protection diode

文件：45.41 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：324.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

文件：48.41 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：324.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

文件：48.41 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：324.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n•Super low on-state resistance:\nRDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A)\nRDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A)\n•Low Ciss: Ciss= 9500 pF TYP.\n•Built-in gate protectio •Super low on-state resistance:\nRDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A)\nRDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A)\n•Low Ciss: Ciss= 9500 pF TYP.\n•Built-in gate protection diode;

Renesas

瑞萨