SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 26 mΩ MAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 41 mΩ MAX. (VGS= 4.0 V, ID= 20 A) • Low Ciss: Ciss= 1500 pF TYP. • Built-in

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

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Nch Single Power Mosfet 60V 40A 26Mohm Mp-25Z/To-220Smd

The 2SK3433-Z is a Nch Single Power Mosfet 60V 40A 26Mohm Mp-25Z/To-220Smd. • Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)\n• Low Ciss : Ciss = 1500 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3433 Data SheetPDF208 ;

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