SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

文件：249.16 Kbytes 页数：10 Pages

RENESAS

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

文件：82.28 Kbytes 页数：8 Pages

NEC

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MOS Field Effect Transistor

Features ● Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) ● Gate voltage rating 30 V ● Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) ● Avalanche capability ratings ● Surface mount package available

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KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

文件：82.28 Kbytes 页数：8 Pages

NEC

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