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2SK3479

MOS Field Effect Transistor

FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SK3479

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3479-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-S

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3479-Z

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3479-Z-E1-AZ

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3479-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=11000pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3479-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3479-ZJ

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    2SK3479

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    SWITCHING N-CHANNEL POWER MOSFET

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-220
35890
询价
NEC
08+(pbfree)
TO-220AB
8866
询价
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
23+
TO-220AB
7600
全新原装现货
询价
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
49200
正品授权货源可靠
询价
NEC
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
NEC
1948+
TO-263
6852
只做原装正品现货!或订货假一赔十!
询价
VB
2019
T0-220
55000
绝对原装正品假一罚十!
询价
R
23+
T0-TO-220
37650
全新原装真实库存含13点增值税票!
询价
更多2SK3479供应商 更新时间2024-4-29 15:29:00