MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci

文件：250.46 Kbytes 页数：10 Pages

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Nch Single Power Mosfet 100V 36A 33Mohm Mp-3/To-251

The 2SK3482 is a Nch Single Power Mosfet 100V 36A 33Mohm Mp-3/To-251. • Low on-state resistanceRDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)\n• Low Ciss : Ciss = 3600 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package;

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci

文件：250.46 Kbytes 页数：10 Pages

RENESAS

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SWITCHING N-CHANNEL POWER MOS FET

文件：251.05 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

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