SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Bu

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DESCRIPTION\nThe 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance:\n  RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n  RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built- • Super low on-state resistance:\n  RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)\n  RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 11000 pF TYP.\n• Built-in gate protection diode;

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The 2SK3479-Z is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd. • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss : Ciss = 11000 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日2SK3479 Data SheetPDF207 ;

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