TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator and DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：104.81 Kbytes 页数：3 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：154.06 Kbytes 页数：3 Pages

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Switching Regulator and DC-DC Converter Applications

文件：149.03 Kbytes 页数：3 Pages

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Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID 0.5 A \nPower Dissipation PD 1.5 W \nDrain-Source voltage VDSS 500 V ;

Toshiba

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Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：154.06 Kbytes 页数：3 Pages

TOSHIBA

东芝

Switching Regulator and DC-DC Converter Applications

文件：149.03 Kbytes 页数：3 Pages

TOSHIBA

东芝