Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：314.85 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件：191.47 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：398.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.08587 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID 1 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS 450 V ;

Toshiba

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件：191.47 Kbytes 页数：6 Pages

TOSHIBA

东芝