SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

文件：48.68 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

文件：214.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：327.46 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

文件：48.68 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

文件：214.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：401.61 Kbytes 页数：2 Pages

ISC

无锡固电