SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

文件：39.84 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：370.41 Kbytes 页数：10 Pages

RENESAS

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MOS Field Effect Transistor

Features Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode

文件：45.96 Kbytes 页数：1 Pages

KEXIN

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isc N-Channel MOSFET Transistor

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文件：960.1 Kbytes 页数：7 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：370.41 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

文件：39.84 Kbytes 页数：4 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

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