2SK3211STL-E规格书应用电路供应代理瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3211STL-E	文件：94.71 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.71 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3211L	文件：64.17 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：64.17 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3211L-E	文件：94.71 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.71 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3211S	文件：64.17 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：64.17 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SK3211STL-E供应商更新时间2026-4-18 10:20:00