Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source

文件：26.45 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：53.29 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

文件：323.97 Kbytes 页数：2 Pages

ISC

无锡固电

Transistors>Switching/MOSFETs

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：53.29 Kbytes 页数：4 Pages

RENESAS

瑞萨