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2SK33

2SK33

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

2SK330

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

*Highbreakdownvoltage:VGDS=−50V *Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) *LowRDS(ON):RDS(ON)=320Ω(typ.)(IDSS=5mA) *Complementaryto2SJ105 *Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK330

MINI PACKAGE SERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3301

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3301

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS)

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3301Q

Switching Regulatorand DC-DC Converter Applications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3302

Switching Regulator, DC-DC Converter Applications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=11.5Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.4S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmodel:Vth=2.0~4.0V(VDS=10V,ID=1

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3302

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3304

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge:QG=44nCTYP.(VDD=450V,VGS=10V,ID=7.0A) •Gat

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3304

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge: QG=44nCTYP.(VDD=4

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3305

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3305

MOS Field Effect Transistor

Features Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID=5.0A) Gatevoltagerating±30V Lowon-stateresistance RDS(on)=1.5ΩMAX.(VGS=10V,ID=2.5A) Avalanchecapabilityratings

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SK3305

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3305B

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3305B-S19-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3305-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3305-S

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3305-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3305-ZJ

SWITCHINGN-CHANNEL POWER MOS FET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3306

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The2SK3306isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

详细参数

  • 型号:

    2SK33

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

供应商型号品牌批号封装库存备注价格
NEC
17+
TO263/
9988
只做原装进口,自己库存
询价
Renesas
21+
30
全新原装鄙视假货15118075546
询价
TOSHIBA/东芝
23+
12000
询价
Renesas
20+
SOT323
36800
原装优势主营型号-可开原型号增税票
询价
TOSHIBA/东芝
21+
SOT252
6688
十年老店,原装正品
询价
Renesas(瑞萨)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
TOSHIBA/东芝
21+
TO263
6000
只做原装
询价
RENESAS-瑞萨
24+25+/26+27+
车规-被动器件
76800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
TOSHIBA
2017+
SMD
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
TOSHIBA
22+
0603
18560
假一赔十全新原装现货特价供应工厂客户可放款
询价
更多2SK33供应商 更新时间2024-4-27 9:30:00