Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK)

文件：39.3 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK)

文件：99.08 Kbytes 页数：12 Pages

RENESAS

瑞萨

Transistors>Switching/MOSFETs

Renesas

瑞萨

QFP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO220

RENESAS

瑞萨

上传：深圳市正纳电子有限公司