N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS)

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

文件：142.93 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulatorand DC-DC Converter Applications

文件：150.61 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

文件：166.05 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 700V VDSS)

Polarity：N-ch\nGeneration：π-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 1 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS 900 V ;

Toshiba

东芝

Switching Regulatorand DC-DC Converter Applications

Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 m

文件：150.55 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

文件：166.05 Kbytes 页数：3 Pages

TOSHIBA

东芝

Switching Regulatorand DC-DC Converter Applications

文件：150.61 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：330.89 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：398.74 Kbytes 页数：2 Pages

ISC

无锡固电