Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source

文件：28.19 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.57 Kbytes 页数：8 Pages

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N-Channel MOSFET uses advanced trench technology

文件：1.28659 Mbytes 页数：5 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.57 Kbytes 页数：8 Pages

RENESAS

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Silicon N Channel MOS FET High Speed Power Switching

文件：107.27 Kbytes 页数：10 Pages

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