Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：51.57 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：324.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Switching

• Low on-resistance\n        RDS = 0.1 Ω typ.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V source;

HITACHI

日立

Power MOSFETs

Renesas

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：110.33 Kbytes 页数：10 Pages

RENESAS

瑞萨