N-channel enhancement mode MOSFET

N-channel enhancement mode MOSFET ■Features •Low on-resistance, low Qg •High avalanche resistance ■Applications •For PDP •For high-speed switching

文件：75.98 Kbytes 页数：3 Pages

PANASONIC

松下

N-Channel Enhacement Mode MOSFET

N-Channel Enhacement Mode MOSFET Features 4.5 V drive available Low on-state resistance RDS(on)1=12m MAX. (VGS=10V,ID=18A) Low gate charge QG= 30 nC TYP. (ID=35A,VDD=16V,VGS=10V) Built-in gate protection diode Surface mount device available

文件：45.45 Kbytes 页数：1 Pages

KEXIN

科信电子

N-channel enhancement mode MOSFET

N-channel enhancement mode MOSFET\n\n■ •Low on-resistance, low Qg\n•High avalanche resistance\n\n■Applications\n•For PDP\n•For high-speed switching;

Panasonic

松下

N-Channel MOSFET

N-Channel MOSFET ■ Features ●VDS (V) = 100V ●ID = 25 A (VGS = 10V) ●RDS(ON)

文件：964.67 Kbytes 页数：2 Pages

KEXIN

科信电子