TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：234.42 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：323.38 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

文件：185.94 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件：191.61 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications

Toshiba

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件：191.61 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：185.94 Kbytes 页数：6 Pages

TOSHIBA

东芝