Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

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Silicon N Channel MOS FET High Speed Switching

Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS= 1.6 Ωtyp. (VGS= 4 V , ID= 50 mA) RDS= 2.2 Ωtyp. (VGS= 2.5 V , ID= 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

文件：157.77 Kbytes 页数：10 Pages

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Silicon N Channel MOS FET High Speed Switching

• Low on-resistance\n• 2.5 V gate drive device.\n• Small package (CMPAK);

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TO220

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