SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3360 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1= 30 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 40 mΩMAX. (VGS= 4.5 V,

文件：40.47 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 28 mΩMAX. (VGS= 4.5 V, ID=

文件：40.74 Kbytes 页数：4 Pages

NEC

瑞萨

POWER MOSFET

1. Scope This specifies Fuji Power MOSFET 2SK3362-01 2. Construction N-Channel enhancement mode power MOSFET 3. Applications for Switching 4. Outview TO-220 Outview See to 5/13 page

文件：555.19 Kbytes 页数：8 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier

文件：341.56 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：119.65 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：117.79 Kbytes 页数：4 Pages

FUJI

富士通

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

文件：63.52 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

文件：233.39 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

文件：233.39 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

文件：63.52 Kbytes 页数：8 Pages

NEC

瑞萨