SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ci

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isc N-Channel MOSFET Transistor

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ISC

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N-Channel MOSFET uses advanced trench technology

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Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252

The 2SK3386-Z is a Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252. • Low on-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)\n• Low Ciss: Ciss = 2100 pF TYP.\n• Built-in Gate Protection Diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3386 ;

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