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2SK3431

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3431

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=6100pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SK3431

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3431-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3431-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3431-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431-S

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3431-Z

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3431-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3431-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3431-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3431-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

详细参数

  • 型号:

    2SK3431

  • 制造商:

    KEXIN

  • 制造商全称:

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述:

    MOS Field Effect Transistor

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-220
35890
询价
NEC
08+(pbfree)
TO-220AB
8866
询价
NEC
2339+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
RENESAS
2022+
TO-220
5000
只做原装公司现货
询价
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
NEC
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
23+
N/A
48900
正品授权货源可靠
询价
VB
2019
T0-220
55000
绝对原装正品假一罚十!
询价
R
23+
T0-TO-220
37650
全新原装真实库存含13点增值税票!
询价
进口原厂
2020+
TO-220
20000
公司代理品牌,原装现货超低价清仓!
询价
更多2SK3431供应商 更新时间2024-4-27 15:35:00