SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

文件：48.6 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：214.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：327.58 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

文件：214.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：401.73 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

文件：48.6 Kbytes 页数：4 Pages

NEC

瑞萨