TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

文件：230.98 Kbytes 页数：6 Pages

TOSHIBA

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N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10616 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS Type Switching Regulator Applications

文件：192.32 Kbytes 页数：6 Pages

TOSHIBA

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Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications

Toshiba

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件：192.32 Kbytes 页数：6 Pages

TOSHIBA

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