SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

文件：48.58 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

文件：222.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：326.64 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

文件：48.58 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

文件：222.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

文件：232.7 Kbytes 页数：2 Pages

ISC

无锡固电