2SK3418

FEATURES • Low on-resistance RDS (on) = 4.3mΩ typ. • Low voltage drive (4V drive) • The switching speed is fast.

文件：61.8 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

文件：116.69 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件：1.28929 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

文件：116.69 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：136.79 Kbytes 页数：10 Pages

RENESAS

瑞萨