N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4-V power source. ​​​​​​​The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES •

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4.0 V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES • Can

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION\nThe 2SK3408 is a switching device which can be driven directly by a 4-V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.FEATURES\n• Can be driv • Can be driven by a 4-V power source\n• Low on-state resistance\n  RDS(on)1= 195 mΩMAX. (VGS= 10 V, ID= 0.5 A)\n  RDS(on)2= 250 mΩMAX. (VGS= 4.5 V, ID= 0.5 A)\n  RDS(on)3= 260 mΩMAX. (VGS= 4.0 V, ID= 0.5 A)\n• Built-in G-S protection diode against ESD.;

EIC

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SK3408 is a switching device which can be driven directly by a 4. 0 V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power • Can be driven by a 4.0 V power source\n• Low on-state resistance RDS(on)1 = 195 mΩ MAX. (VGS = 10.0 V, ID = 0.5 A) RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A) RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)\n• Built-in G-S protection diode against ESD.;

Renesas

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MOS FIELD EFFECT TRANSISTOR

文件：198.9 Kbytes 页数：9 Pages

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