Silicon N Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：78.47 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

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Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

RENESAS

瑞萨

Power MOSFETs-MOSFETs for high frequency amplifier

Renesas

瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

RENESAS

瑞萨